5 V input level shifter circuit for IGZO thin-film transistors

A Level Shifter Using Aluminum-Doped Zinc Tin Oxide Thin Film Transistors with Negative Threshold Voltages

• IMID 2009 DIGEST Abstract A new level shifter using n-channel aluminum-doped zinc tin oxide (AZTO) thin film transistors (TFTs) was proposed to integrate driving circuits on qVGA panels for mobile display applications. The circuit used positive feedback loop to overcome limitations of circuits designed with oxide TFTs which is depletion mode n-channel TFTs. The measured results shows that the...

Silicon for thin-film transistors

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are...

Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors.

Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type ca...

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V∙s) and a th...

Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors